features ezbright power chip led rf performance 60 mw min. @ 150 ma C 450 & 460 nm lambertian radiation conductive epoxy, solder paste or preforms, or flux eutectic attach thin 100- m chip low forward voltage C 3.5 v typical at 150 ma single wire bond structure maximum dc forward current - 200 ma ? C ? ? ? ? ? ? applications general illumination automobile aircraft decorative lighting task lighting outdoor illumination white leds crosswalk signals backlighting ? C C C C C ? ? ? cree ? ez400? led data sheet c xxx ez400-s xx 000 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 100 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez400-sxx000 chip diagram top view bottom view ezbright led chip 380 x 380 m 2 t = 100 m backside metallization gold bond pad 100 m die cross section anode (+); 3 m ausn cathode (-) d a t a s h e e t : c p r 3 d j r e v . - subject to change without notice. www.cree.com
copyright ? 2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400 are trademarks of cree, inc. cpr3dj rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 5c note c xxx ez400-s xx 000 dc forward current 200 ma peak forward current 350 ma note 3 led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +120c typical electrical/optical characteristics at t a = 5c, if = 50 ma note part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez600-s xx 000 3.1 3.5 4.1 2 21 c460ez600-s xx 000 3.1 3.5 4.1 2 21 mechanical specifcations c xxx ez600-s xx 000 description dimension tolerance p-n junction area (m) 350 x 350 40 chip area (m) 380 x 380 40 chip thickness (m) 100 25 top au bond pad diameter (m) 100 15 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 380 x 380 40 back contact metal thickness (m) 3.0 1.0 notes: maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 150 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. this peak forward current specifcation is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65c. 1. 2. 3.
copyright ? 2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400 are trademarks of cree, inc. 3 cpr3dj rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez400-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez400-s xx 000) orders may be flled with any or all bins (c xxx ez400-0 xxx ) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 150 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez400-s06000 c450ez400-0213 c450ez400-0214 c450ez400-0215 c450ez400-0216 c450ez400-0209 c450ez400-0210 c450ez400-0211 c450ez400-0212 c450ez400-0205 c450ez400-0206 c450ez400-0207 c450ez400-0208 c450ez400-0201 c450ez400-0202 c450ez400-0203 c450ez400-0204 105 mw 90 mw 75 mw 60 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c460ez400-s06000 c460ez400-0213 c460ez400-0214 c460ez400-0215 c460ez400-0216 c460ez400-0209 c460ez400-0210 c460ez400-0211 c460ez400-0212 c460ez400-0205 c460ez400-0206 c460ez400-0207 c460ez400-0208 c460ez400-0201 c460ez400-0202 c460ez400-0203 c460ez400-0204 dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 105 mw 90 mw 75 mw 60 mw
copyright ? 2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400 are trademarks of cree, inc. 4 cpr3dj rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ezbright400. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 junction temperature (c) relative light intensity (%) relative light intensity vs junction temperature forward current vs forward voltage 0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 junction temperature (c) wavelength shift (nm) dominant wavelength shift vs junction temperature relative intensity vs forward current 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 200 if (ma) % relative intensity voltage shift vs junction temperature -0.5 -0.4 -0.3 -0.2 -0.1 0.0 25 50 75 100 125 150 junction temperature (c) voltage shift (v) -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200 if (ma) shift (nm) dominant wavelength shift vs forward current
copyright ? 2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400 are trademarks of cree, inc. 5 cpr3dj rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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